    Cluster structure with multiple chambers attached to the TM for a single or multiple tasks

    Temperature range: 360℃~550℃
 

    Thin film types: SiNx、SiOx、SiOx、SiONx、a-Si etc.

    For LTPS PECVD or thin film package

   Non-uniformity ≤ 5%

   Advanced RF matching system: Plasma stabilized within 0.1 seconds with either 13.56 or 40.68 MHz

   Vacuum-in-vacuum design

   Entire CVD System is either under vacuum or cleaning environment, no contamination

   Process Chambers equipped with RF self-clean de-contamination apparatus, no need to open chamber clean and maximize production time